个人简历
2000年金沙威尼斯欢乐娱人城毕业，2003年香港大学硕士，2007年英国Strathclyde大学博士。 2008-2013 日本立命馆大学，日本学术振兴会JSPS博士后及高级研究员； 2013-2016 日本千叶大学，副教授； 2016-2018 日本国立理化学研究所(RIKEN)，研究员； 2018年起金沙威尼斯欢乐娱人城电子学院教授，RIKEN客座研究员；2020年获聘金沙威尼斯欢乐娱人城紫金学者，江苏省特聘教授。
长期从事宽禁带半导体光电材料与器件的前沿研究，包括宽禁带氮化物半导体材料外延生长，物性分析，新型光电器件，尤其是氮化物分子束外延生长(MBE)技术。在 Appl. Phys. Lett.、Phys. Rev. B.、Scientific Reports、Appl. Phys. Express 等国际学术刊物发表SCI 论文50余篇，国际学术会议邀请报告10余次，多种学术刊物审稿人。主持国家自然科学基金项目一项、江苏省重点研发计划重点项目课题一项。参与科技部重大项目一项、重点研发计划一项。在日期间主持日本学术振兴会项目两项，参与日本学术振兴会、日本科学技术振兴机构等大型项目七项。对氮化物半导体的一些前沿难题进行了深入研究，如：高铟组分InGaN和高铝组分AlGaN 的外延生长机制、p-型掺杂控制、量子阱、超晶格、二维空穴气等。近年重点研究深紫外发光器件，二维空穴气及GaN基互补型集成电路，基于GaN多量子阱的量子级联激光器，面向单光子探测的GaN基光阴极探测器等。
研究方向
氮化物半导体分子束外延生长技术；
氮化物半导体电子与光电子器件； 量子级联激光器；深紫外发光器件； GaN基二维空穴气与氮化物互补型集成电路；面向单光子探测的氮化物光阴极探测器
课题组每年定期招收硕士、博士研究生，欢迎联系、报考。
主要课程
大学物理III；信息电子学前沿实验-原子层磊；半导体光电子材料与器件新生研讨课；微电子与光电子前沿讲座
代表成果
Zhen-Hua Li, Peng-Fei Shao, Gen-Jun Shi, Yao-Zheng Wu, Zheng-Peng Wang, Si-Qi Li, Dong-Qi Zhang, Tao Tao, Qing-Jun Xu, Zi-Li Xie, Jian-Dong Ye, Dun-Jun Chen, Bin Liu†, Ke Wang‡, You-Dou Zheng, and Rong Zhang, Plasma assisted molecular beam epitaxial growth of GaN with low growth rates and their properties, Chin. Phys. B. 31 018102 (2022) T. T. Lin*, L. Wang, K. Wang, T. Grange, S. Birner, H. Hirayama, Over One Watt Output Power Terahertz QuantumCascade Lasers by Using High Doping Concentration and variable barrier height, phys. status. solidi. RRL,2200033 (2022) WANG, LI; LIN, Tsung-Tse; WANG, Ke; Hirayama, Hideki, Limitation of parasitic absorption in designs of three-state terahertz quantum cascade lasers with direct-phonon injection, Appl. Phys. Express 15 052002, (2022) Li Wang*, Tsung‑Tse Lin, Mingxi Chen , Ke Wang & Hideki Hirayama, Leakages suppression by isolating the desired quantum levels for high‑temperature terahertz quantum cascade lasers, Sci. Rep 11:23634 (2021) Zhenhua Li, Pengfei Shao, Yaozheng Wu, Genjun Shi, Tao Tao, Zili Xie, Peng Chen, Yugang Zhou, Xiangqian Xiu, Dunjun Chen, Bin Liu*, Ke Wang*, Youdou Zheng, Rong Zhang, Tsungtse Lin, Li Wang, Hideki Hirayama, Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates, Jpn. J. Appl. Phys, 60, 075504 (2021) Yaozheng Wu, Bin Liu, Feifan Xu, Yimeng Sang, Tao Tao, Zili Xie, Ke Wang, Xiangqian Xiu, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng, High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD, Photonics Research, 9, 1683 (2021) Y. Z. Wu, B. Liu*, Zhenhua Li, Tao Tao, Zili Xie, Ke Wang*, Xiangqian Xiu, Dunjun Chen, Hai Lu, Rong Zhang and Youdou Zheng, Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy, phys. Stat. Soli. (a) 217, 1900729 (2020) Y. Z. Wu, B. Liu*, Zhenhua Li, Tao Tao, Zili Xie, Ke Wang*, Xiangqian Xiu, Dunjun Chen, Hai Lu, Rong Zhang and Youdou Zheng, The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates, Nanotechnology 31, 4, 045604 (2020)
S. Fujikawa*, T. Ishiguro, Ke Wang*, Wataru Terashima, Hiroki Fujishiro, H. Hirayama,“Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD”,J. Crystal. Growth 510, 47 (2020) Li Wang, Tsung-Tse Lin, Ke Wang*, Thomas Grange, Stefan Birner & Hideki Hirayama, “Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures”, Scientific Reports 9, 9446 (2019) T.T. Lin, L. Wang, K. Wang*and H. Hirayama, “Optimization of terahertz quantum cascade lasers by suppressing carrier leakage channel via high-energy state”, Appl. Phys. Express. 11, 112702 (2018) Ke Wang, T. Grange, T. T. Lin, L. Wang, Z. Jéhn, S. Birner, J. Yun, W. Terashima and H. Hirayama, “Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures”, Appl. Phys. Lett. 113, 061109 (2018) K. Wang, T. T. Lin, L. Wang, W. Terashima, and H. Hirayama, “Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers”, J. J. Appl. Phys.57, 081001 (2018) K. Wang, D. Imai, K. Kusakabe, A. Yoshikawa, “Leak path passivation by in-situ Al-N for InGaN solar cells operating at wavelengths up to 570 nm”, Appl. Phys. Lett.108, 092105 (2016) K. Wang, D. Imai, K. Kusakabe, A. Yoshikawa, “Proposal of leak path passivation for InGaN solar cells to reduce the leakage current”, Appl. Phys. Lett.108, 042108 (2016) K. Wang, T. Araki, M. Takeuchi, E. Yoon, Y. Nanishi, “Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate", Appl. Phys. Lett. 104, 032108 (2014) K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon Llado, J. W. Ager III, W. Walukiewicz and Y. Nanishi, “P-type InGaN across the entire alloy composition range”, Appl. Phys. Lett. 102, 102111 (2013) K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III, “Mg doped InN and confirmation of free holes in InN”, Appl. Phys. Lett. 98., 042104 (2011) K. Wang, K. P. O’Donnell, B. Hourahine, R. W. Martin, I. M. Watson, K. Lorenz, and E. Alves, “Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range”, Physical. Review. B. 80,125206 (2009) K. Wang, R.W. Martin, E. Nogales, P.R. Edwards, K.P. O’Donnell, K. Lorenz, E. Alves, and I.M. Watson, “Cathodoluminescence of rare earth implanted AlInN”, Appl. Phys. Lett. 89, 131912 (2006) K. Wang, R.W. Martin, K.P. O'Donnell, V. Katchkanov, E. Nogales, K. Lorenz, E. Alves, S. Ruffenach and O. Briot, “Selectively excited photoluminescence from Eu-implanted GaN”, Appl. Phys. Lett. 87,112107 (2005)
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